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Response transients in a Pd-Ni/AlN/n-Si hydrogen sensor

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dc.contributor.author Zhang, Linfeng en_US
dc.contributor.author McCullen, Erik F. en_US
dc.contributor.author Prakasam, Haripriya E. en_US
dc.contributor.author Takur, Jagdish en_US
dc.contributor.author Naik, Ratna en_US
dc.contributor.author Auner, Gregory W. en_US
dc.contributor.author Ng, K.Y. Simon en_US
dc.date.accessioned 2014-07-16T16:37:30Z
dc.date.available 2014-07-16T16:37:30Z
dc.date.issued 2007-04-10 en_US
dc.identifier.citation L. Zhang, E. F. McCullen, H. E. Prakasam, J. Thakur, R. Naik, G. W. Auner, K. Y. S. Ng, "Response transients in a Pd-Ni/AlN/n-Si hydrogen sensor," Sensors and Actuators B: Chemical, vol. 123, no. 1, Apr. 2007.
dc.identifier.uri https://scholarworks.bridgeport.edu/xmlui/handle/123456789/515
dc.description.abstract The response transient from Pd and Pd-Ni alloy gated MIS hydrogen sensors with AlN as the insulating layer is investigated. Often we observe two distinct components of the transient response after switching on (or off) the hydrogen. On turn on, the initial rise of the response is followed by an overshoot which then slowly decays to the final steady state signal. We call the combination of the overshoot with this latter decay, the reverse transient. Some of our data also show a symmetric transient after hydrogen turn off. This paper presents results of a study of reverse transients observed in our devices. The temperature dependence of these reverse transient decay rates allows the estimate of the corresponding activation energies as 90 kJ/mol and 110 kJ/mol, respectively, for Pd and Pd-Ni gated devices. The closeness of these values suggests that the underlying mechanism is independent of the nature of the gate. A possible mechanism might be associated with the redistribution of low mobility negative charges within the AlN. en_US
dc.description.uri http://dx.doi.org.libproxy.bridgeport.edu/10.1016/j.snb.2006.08.030 en_US
dc.language.iso en_US en_US
dc.publisher Elsevier en_US
dc.subject Engineering en_US
dc.subject Hydrogen en_US
dc.subject Sensor en_US
dc.subject Palladium-nickel (Pd-Ni) alloy en_US
dc.subject Aluminium nitride (AlN) en_US
dc.title Response transients in a Pd-Ni/AlN/n-Si hydrogen sensor en_US
dc.type Article en_US
dc.publication.issue 1 en_US
dc.publication.name Sensors and Actuators B: Chemical en_US
dc.publication.volume 123 en_US

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