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Performance of a MIS Type Pd-Cr/AlN/Si Hydrogen Sensor

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dc.contributor.author Zhang, Linfeng
dc.contributor.author Al-Homoudi, Ibrahim A.
dc.contributor.author Rahman, Md H.
dc.contributor.author McCullen, Erik F.
dc.contributor.author Rimai, Lajos
dc.contributor.author Baird, Ron J.
dc.contributor.author Naik, Ratna
dc.contributor.author Newaz, Golam
dc.contributor.author Auner, Gregory W.
dc.contributor.author Ng, K.Y. Simon
dc.date.accessioned 2016-05-10T19:03:13Z
dc.date.available 2016-05-10T19:03:13Z
dc.date.issued 2005
dc.identifier.uri https://scholarworks.bridgeport.edu/xmlui/handle/123456789/1607
dc.description.abstract An MIS Hydrogen sensor with a Pd0.96Cr0.04/AlN/Si structure was fabricated, exhibiting the dynamic range considerably wider than that of analogous devices with pure Pd gates. A useful response could be obtained for Hydrogen concentrations as large as 50,000 ppm. Although the response amplitude was much reduced at the lower concentrations, satisfactory signal to noise down to 50 ppm could be obtained. The saturating magnitude of the electrical response is in the range of 0.1 to 0.5 V, which is the same as that for the pure Pd gated devices, inspite of the 3 orders of magnitude difference in the saturation hydrogen concentration. This result will be discussed in terms of the response mechanism of these devices. en_US
dc.language.iso en_US en_US
dc.publisher Materials Research Society en_US
dc.subject Hydrogen en_US
dc.subject Hydrogen sensor en_US
dc.subject Sensors en_US
dc.title Performance of a MIS Type Pd-Cr/AlN/Si Hydrogen Sensor en_US
dc.type Article en_US
dc.publication.name Materials Research Society Symposium Proceedings en_US
dc.publication.volume 828 en_US
dc.event.name Materials Research Society Symposium en_US

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