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Browsing University of Bridgeport by Author "Rahman, Md H."

Browsing University of Bridgeport by Author "Rahman, Md H."

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  • Rahman, Md H.; Thakur, Jagdish S.; Rimai, Lajos; Perooly, Soma; Naik, Ratna; Zhang, Linfeng; Auner, Gregory W.; Newaz, Golam (Elsevier, 2008-01-29)
    The electrical response of a hydrogen-sensing device is either a rectifying diode-type or a capacitor-type but could not be operated simultaneously in both the modes. However, we are able to demonstrate that a Pd/AlN/SiC ...
  • Zhang, Linfeng; McCullen, Erik F.; Rahman, Md H.; Baird, Ron J.; Naik, Ratna; Rimai, Lajos; Auner, Gregory W.; Ng, K.Y. Simon (American Institute of Chemical Engineers, 2004-11-07)
    Instead of the pure Pd gates in MIS type hydrogen sensor, Pd-Cr alloy gates with different composition and structure were used to improve the sensors performance. The use of Pd-Cr alloy not only extended the dynamic range ...
  • Zhang, Linfeng; Al-Homoudi, Ibrahim A.; Rahman, Md H.; McCullen, Erik F.; Rimai, Lajos; Baird, Ron J.; Naik, Ratna; Newaz, Golam; Auner, Gregory W.; Ng, K.Y. Simon (Materials Research Society, 2005)
    An MIS Hydrogen sensor with a Pd0.96Cr0.04/AlN/Si structure was fabricated, exhibiting the dynamic range considerably wider than that of analogous devices with pure Pd gates. A useful response could be obtained for Hydrogen ...
  • Zhang, Linfeng; McCullen, Erik F.; Rahman, Md H.; Thakur, Jagdish S.; Rimai, Lajos; Baird, Ron J.; Naik, Ratna; Newaz, Golam; Auner, Gregory W.; Ng, K.Y. Simon (Elsevier, 2006-02-27)
    The effect of Cr addition to the gate of a Pd/AlN/Si Hydrogen gas sensor was investigated by modifying the gate composition and structure. A device with a pure Pd gate responds to hydrogen concentrations as low as 1 ppm, ...

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