UB ScholarWorks

Browsing University of Bridgeport by Author "Naik, Ratna"

Browsing University of Bridgeport by Author "Naik, Ratna"

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  • Thakur, Jagdish S.; Haripriya E., Prakasam; Zhang, Linfeng; McCullen, Erik F.; Rimai, Lajos; García-Suárez, V. M.; Naik, Ratna; Ng, K.Y. Simon; Auner, Gregory W. (American Physical Society, 2007-02-06)
    The time-dependant current response of Pd/AlN/ Si-based devices is investigated for different hydrogen concentrations. At a fixed applied voltage, the device current suddenly increases when hydrogen gas is turned on and ...
  • Rahman, Md H.; Thakur, Jagdish S.; Rimai, Lajos; Perooly, Soma; Naik, Ratna; Zhang, Linfeng; Auner, Gregory W.; Newaz, Golam (Elsevier, 2008-01-29)
    The electrical response of a hydrogen-sensing device is either a rectifying diode-type or a capacitor-type but could not be operated simultaneously in both the modes. However, we are able to demonstrate that a Pd/AlN/SiC ...
  • Zhang, Linfeng; McCullen, Erik F.; Rahman, Md H.; Baird, Ron J.; Naik, Ratna; Rimai, Lajos; Auner, Gregory W.; Ng, K.Y. Simon (American Institute of Chemical Engineers, 2004-11-07)
    Instead of the pure Pd gates in MIS type hydrogen sensor, Pd-Cr alloy gates with different composition and structure were used to improve the sensors performance. The use of Pd-Cr alloy not only extended the dynamic range ...
  • Zhang, Linfeng; Al-Homoudi, Ibrahim A.; Rahman, Md H.; McCullen, Erik F.; Rimai, Lajos; Baird, Ron J.; Naik, Ratna; Newaz, Golam; Auner, Gregory W.; Ng, K.Y. Simon (Materials Research Society, 2005)
    An MIS Hydrogen sensor with a Pd0.96Cr0.04/AlN/Si structure was fabricated, exhibiting the dynamic range considerably wider than that of analogous devices with pure Pd gates. A useful response could be obtained for Hydrogen ...
  • Zhang, Linfeng; McCullen, Erik F.; Rahman, Md H.; Thakur, Jagdish S.; Rimai, Lajos; Baird, Ron J.; Naik, Ratna; Newaz, Golam; Auner, Gregory W.; Ng, K.Y. Simon (Elsevier, 2006-02-27)
    The effect of Cr addition to the gate of a Pd/AlN/Si Hydrogen gas sensor was investigated by modifying the gate composition and structure. A device with a pure Pd gate responds to hydrogen concentrations as low as 1 ppm, ...
  • Zhang, Linfeng; McCullen, Erik F.; Prakasam, Haripriya E.; Takur, Jagdish; Naik, Ratna; Auner, Gregory W.; Ng, K.Y. Simon (Elsevier, 2007-04-10)
    The response transient from Pd and Pd-Ni alloy gated MIS hydrogen sensors with AlN as the insulating layer is investigated. Often we observe two distinct components of the transient response after switching on (or off) the ...
  • Zhang, Linfeng; McCullen, Erik F.; Rimai, Lajos; Naik, Ratna; Auner, Gregory W.; Ng, K.Y. Simon (IEEE, 2009-10)
    The pure Pd and Pd alloy gated metal-insulator-semiconductor (MIS) hydrogen sensors have been studied. The chemical state of palladium in Pd and Pd alloy gated devices is similar and Pd alloy devices show a wide dynamic ...

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