Dual-mode operation of a Pd/AlN/SiC device for hydrogen sensing
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Authors
Rahman, Md H.
Thakur, Jagdish S.
Rimai, Lajos
Perooly, Soma
Naik, Ratna
Zhang, Linfeng
Auner, Gregory W.
Newaz, Golam
Issue Date
2008-01-29
Type
Article
Language
en_US
Keywords
Engineering , Hydrogen sensor , Dual-mode operation , Palladium aluminium nitride silicon carbide (Pd/AlN/SiC) , Dual-mode rectifying diode , Dual-mode capacitor
Alternative Title
Abstract
The electrical response of a hydrogen-sensing device is either a rectifying diode-type or a capacitor-type but could not be operated simultaneously in both the modes. However, we are able to demonstrate that a Pd/AlN/SiC device can operate in dual mode either as a rectifying diode or a capacitor. The device with a 50 nm AlN layer shows a shift of ?0.35 V for 100 ppm H2 in both the modes, at a temperature of 150 C. It seems that the presence of donor levels in the bandgap of the AlN layer with a wide range of energy is responsible for the observed electrical behavior of this device.
Description
Citation
M. H. Rahman, J. S. Thakur, L. Rimai, S. Perooly, R. Naik, L. Zhang, G. W. Auner, G. Newaz, "Dual-mode operation of a Pd/AlN/SiC device for hydrogen sensing," Sensors and Actuators B: Chemical, vol. 129, no. 1, Jan. 2008.
Publisher
Elsevier