The Sensing Mechanism and the Response Simulation of the MIS Hydrogen Sensor
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Authors
Zhang, Linfeng
McCullen, Erik F.
Rimai, Lajos
Naik, Ratna
Auner, Gregory W.
Ng, K.Y. Simon
Issue Date
2009-10
Type
Article
Language
en_US
Keywords
Engineering , Sensors
Alternative Title
Abstract
The pure Pd and Pd alloy gated metal-insulator-semiconductor (MIS) hydrogen sensors have been studied. The chemical state of palladium in Pd and Pd alloy gated devices is similar and Pd alloy devices show a wide dynamic range. According to the hydrogen induced capacitance-voltage ( CV) shift and the response from a refreshed sensor, a new sensing mechanism is proposed that the hydrogen response is due to the protons on the metal/insulator interface and some of the protons take a long time to be desorbed from the interface. Based on this mechanism, a one-dimensional model is constructed with the consideration of the series resistance and fixed positive charges to simulate the CV/GV curves and hydrogen response from the Pd-Cr gated device.
Description
Citation
L. Zhang, E. F. McCullen, L. Rimai, R. Naik, G. W. Auner, K. Y. S. Ng, "The Sensing Mechanism and the Response Simulation of the MIS Hydrogen Sensor," Sensors Journal, IEEE, vol. 9, no. 10, Oct. 2009.
Publisher
IEEE
License
Journal
Volume
Issue
PubMed ID
DOI
ISSN
1530-437X