A Model For The Resonant Tunneling Semiconductor Controlled Rectifier
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Authors
Erkaya, H.H.
Issue Date
2007-07-01
Type
Article
Language
Keywords
Semiconductor devices , Resonant tunneling devices , Resonant-tunneling-semiconductor-controlled rectifier (RT-SCR)
Alternative Title
Abstract
A new switch called a resonant-tunneling-semiconductor-controlled rectifier (RT-SCR) has been proposed. A two-transistor model is used for the device. One of the transistors in the two-transistor model is assumed to be a resonant tunneling transistor (RTT), while the other transistor is taken to be a bipolar transistor. The current–voltage relationships of the device have been numerically obtained and compared with the traditional thyristor characteristics. The new device requires smaller turn-on gate voltage than a comparable traditional device for the same gate current. This indicates that in comparison with the traditional thyristor, a smaller control current may be used to turn on the device at a particular voltage.
Description
Citation
H. H. Erkaya, "A Model For The Resonant Tunneling Semiconductor Controlled Rectifier," Microelectronics Journal, vol. 38, July 2007.
Publisher
Elsevier Science Inc.