Characteristic jump in the electrical properties of a Pd/AlN/Si-based device on exposure to hydrogen
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Authors
Thakur, Jagdish S.
Haripriya E., Prakasam
Zhang, Linfeng
McCullen, Erik F.
Rimai, Lajos
García-Suárez, V. M.
Naik, Ratna
Ng, K.Y. Simon
Auner, Gregory W.
Issue Date
2007-02-06
Type
Article
Language
en_US
Keywords
Engineering , Palladium aluminium nitride Silicon (Pd/AlN/Si) , Hydrogen , Electronic structure , First-principles simulations
Alternative Title
Abstract
The time-dependant current response of Pd/AlN/ Si-based devices is investigated for different hydrogen concentrations. At a fixed applied voltage, the device current suddenly increases when hydrogen gas is turned on and the magnitude of this current shift varies with the hydrogen concentrations. Using first-principles simulations, the electronic structure of the Pd with different hydrogen concentrations in tetrahedric and octahedric positions is calculated. We find that when hydrogen loads the Pd metal, its Fermi energy changes, which affects the Fermi level of the Pd/AlN/Si device and thus its electrical response.
Description
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Citation
Thakur, J. S. and Prakasam, H. E. and Zhang, Linfeng and McCullen, E. F. and Rimai, L. and García-Suárez, V. M. and Naik, R. and Ng, K. Y. S. and Auner, G. W., "Characteristic jump in the electrical properties of a Pd/AlN/Si-based device on exposure to hydrogen," Phys. Rev. B Vol. 75 No.7: pg. 5, 2007
Publisher
American Physical Society