Characteristics Of AlGaAs/GaAs Heterostructure RT-SCR Model
No Thumbnail Available
Authors
Barkana, Buket D.
Issue Date
2008-12
Type
Article
Language
Keywords
Resonant-tunneling-semiconductor-controlled rectifier (RT-SCR)
Alternative Title
Abstract
Electrical properties of a resonant-tunneling-semiconductor-controlled rectifier (RT-SCR) model have been presented. The current, temperature, gain, doping concentration, and layer size versus voltage relationships have been numerically obtained. The RT-SCR device requires smaller turn-on voltage than a comparable traditional device for the same gate current. This indicates that, in comparison with the traditional thyristor, a smaller control current may be used to turn on the device at a particular voltage. Characteristics of the device are affected by p1, n1, and p2 regions. It is showed that higher doping concentrations cause lower turn-on voltages and an increase in the region width results in higher turn-on voltages for p1 and p2 regions. Changing the doping concentration and width in n1 region affects the characteristics of the structure differently from that of the p1 and p2 regions.
Description
Citation
B. D. Barkana, "Characteristics Of AlGaAs/GaAs Heterostructure RT-SCR Model," Microelectronics Journal, vol. 39, no. 12, Dec. 2008.
Publisher
Elsevier